STB7NA40 n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.82 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized n reduced threshold voltage spread n through-hole i2pak (to-262) power package in tube (suffix "-1") n surface-mounting d2pack (to-263) power package in tube (no suffix) or in tape & reel (suffix "t4") applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 400 v v dgr drain- gate voltage (r gs = 20 k w ) 400 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 6.5 a i d drain current (continuous) at t c = 100 o c 4.1 a i dm ( ) drain current (pulsed) 26 a p tot total dissipation at t c = 25 o c 100 w derating factor 0.8 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d STB7NA40 400 v < 1 w 6.5 a october 1995 1 2 3 1 3 i2pak to-262 d2pak to-263 1/10
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.25 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 6.5 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 210 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 8.4 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 4.1 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 3.5 a v gs = 10v i d = 3.5 a t c = 100 o c 0.82 1 2 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 6.5 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 3.5 a 3.1 4.6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 700 120 31 900 160 43 pf pf pf STB7NA40 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 200 v i d = 3.5 a r g = 47 w v gs = 10 v (see test circuit, figure 3) 25 75 35 100 ns ns (di/dt) on turn-on current slope v dd = 320 v i d = 7 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 220 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v i d = 7 a v gs = 10 v 34 7 15 45 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 320 v i d = 7 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 40 25 75 55 35 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 6.5 26 a a v sd ( * ) forward on voltage i sd = 6.5 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 380 4.8 25 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STB7NA40 3/10
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STB7NA40 4/10
capacitance variations normalized on resistance vs temperature turn-off drain-source voltage slope normalized gate threshold voltage vs temperature turn-on current slope cross-over time STB7NA40 5/10
switching safe operating area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuit accidental overload area fig. 2: unclamped inductive waveform STB7NA40 6/10
fig. 3: switching times test circuits for resistive load fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit STB7NA40 7/10
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b1 1.2 1.38 0.047 0.054 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.37 0.050 0.054 l l1 b2 b d e a c2 c a1 l2 e to-262 (i2pak) mechanical data STB7NA40 8/10
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 9 9.35 0.354 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.37 0.050 0.054 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 to-263 (d2pak) mechanical data STB7NA40 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STB7NA40 10/10
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